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75329G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 75329G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO247
 

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Principales características: 75329G

 0.1. Size:252K  fairchild semi
 huf75329g3 huf75329p3 huf75329s3s.pdf pdf_icon

75329G

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on t

 9.1. Size:292K  fairchild semi
 hufa75329p3 hufa75329s3s.pdf pdf_icon

75329G

HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on th

 9.2. Size:660K  fairchild semi
 huf75329d3st.pdf pdf_icon

75329G

HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 m 20A, 55V These N-Channel power MOSFETs are manufactured using Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou

 9.3. Size:225K  fairchild semi
 huf75329d3-s.pdf pdf_icon

75329G

HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the

MOSTRAR MÁS

Otros transistores... 40841 , 75307D3 , 75307P3 , 75309D , 75309P3 , 75321D3 , 75321P , 75321S , IRF840 , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G , 75339P , 75339S .

History: VBE1105

 

 
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