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75329G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 75329G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 94 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 49 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Resistencia entre drenaje y fuente RDS(on): 0.024 Ohm
   Paquete / Cubierta: TO247

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75329G Datasheet (PDF)

 0.1. Size:252K  fairchild semi
huf75329g3 huf75329p3 huf75329s3s.pdf

75329G 75329G

HUF75329G3, HUF75329P3, HUF75329S3SData Sheet December 200149A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on t

 9.1. Size:292K  fairchild semi
hufa75329p3 hufa75329s3s.pdf

75329G 75329G

HUFA75329G3, HUFA75329P3, HUFA75329S3SData Sheet June 200249A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on th

 9.2. Size:660K  fairchild semi
huf75329d3st.pdf

75329G 75329G

HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured using Simulation Modelsthe innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Modelssilicon area, resulting in ou

 9.3. Size:225K  fairchild semi
huf75329d3-s.pdf

75329G 75329G

HUF75329D3, HUF75329D3SData Sheet December 200120A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models achieves the

 9.4. Size:309K  fairchild semi
hufa75329d3st hufa75329d3 hufa75329d3s.pdf

75329G 75329G

HUFA75329D3, HUFA75329D3SData Sheet June 1999 File Number 4426.420A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Mode

 9.5. Size:715K  onsemi
huf75329d3s.pdf

75329G 75329G

HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFETFeatures55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on-Modelsresistance per silicon area, resulting in o

Otros transistores... 40841 , 75307D3 , 75307P3 , 75309D , 75309P3 , 75321D3 , 75321P , 75321S , IRF740 , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G , 75339P , 75339S .

 

 
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