BUK953R2-40B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK953R2-40B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: TO220AB
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BUK953R2-40B Datasheet (PDF)
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buk953r2-40e.pdf

BUK953R2-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
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BUK953R5-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
Otros transistores... BUK9520-100B , BUK9520-55A , BUK9523-75A , BUK9524-55A , BUK9529-100B , BUK952R8-30B , BUK9535-100A , BUK9535-55A , K4145 , BUK954R2-55B , BUK954R4-40B , BUK9575-100A , BUK9575-55A , BUK9604-40A , BUK9605-30A , BUK9606-40B , BUK9606-55A .
History: 2SK2554 | APL602J | CES2303 | H7P1006MD90TZ | IPB65R110CFD | FDS4435-NL | PMV35EPE
History: 2SK2554 | APL602J | CES2303 | H7P1006MD90TZ | IPB65R110CFD | FDS4435-NL | PMV35EPE



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