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BUK9606-75B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9606-75B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 15 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 95 nC

Resistencia drenaje-fuente RDS(on): 0.0055 Ohm

Empaquetado / Estuche: D2PAK

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BUK9606-75B Datasheet (PDF)

1.1. buk9506-75b buk9606-75b.pdf Size:333K _philips

BUK9606-75B
BUK9606-75B

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

2.1. buk9606-30 1.pdf Size:51K _philips

BUK9606-75B
BUK9606-75B

Philips Semiconductors Product specification TrenchMOS? transistor BUK9606-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 75 A Thedevice features very

2.2. buk9506 buk9606-55a 2.pdf Size:66K _philips

BUK9606-75B
BUK9606-75B

Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology which

 2.3. buk9606-55a 1.pdf Size:56K _philips

BUK9606-75B
BUK9606-75B

Philips Semiconductors Product specification TrenchMOS? transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 75 A the device features ve

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