BUK9628-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9628-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 166 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: D2PAK

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BUK9628-100A datasheet

 ..1. Size:77K  philips
 buk9528 buk9628-100a.pdf pdf_icon

BUK9628-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 49 A trench techn

 ..2. Size:1288K  nxp
 buk9628-100a.pdf pdf_icon

BUK9628-100A

BUK9628-100A N-channel TrenchMOS logic level FET Rev. 02 26 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

 6.1. Size:55K  philips
 buk9628-55 2.pdf pdf_icon

BUK9628-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9628-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 40 A the device fea

 6.2. Size:317K  philips
 buk9528-55a buk9528-55a buk9628-55a.pdf pdf_icon

BUK9628-100A

BUK9528-55A; BUK9628-55A TrenchMOS logic level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9528-55A in SOT78 (TO-220AB) BUK9628-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS techno

MOSTRAR MÁS

Otros transistores... BUK9616-55A, BUK9616-75B, BUK96180-100A, BUK9618-55A, BUK9620-100B, BUK9620-55A, BUK9623-75A, BUK9624-55A, 10N65, BUK9628-55A, BUK9629-100B, BUK962R8-30B, BUK9635-100A, BUK9635-55A, BUK963R2-40B, BUK9640-100A, BUK964R2-55B