BUK9675-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9675-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 98 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm

Encapsulados: D2PAK

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BUK9675-100A datasheet

 ..1. Size:82K  philips
 buk9575 buk9675-100a.pdf pdf_icon

BUK9675-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9575-100A Logic level FET BUK9675-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 23 A trench techn

 ..2. Size:710K  nxp
 buk9675-100a.pdf pdf_icon

BUK9675-100A

BUK9675-100A N-channel TrenchMOS logic level FET 18 August 2015 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compl

 6.1. Size:345K  philips
 buk9575-55a buk9675-55a.pdf pdf_icon

BUK9675-100A

BUK9575-55A; BUK9675-55A TrenchMOS logic level FET Rev. 01 9 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9575-55A in SOT78 (TO-220AB) BUK9675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS techno

 6.2. Size:56K  philips
 buk9675-55 2.pdf pdf_icon

BUK9675-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9675-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 19.7 A the device f

MOSTRAR MÁS

Otros transistores... BUK962R8-30B, BUK9635-100A, BUK9635-55A, BUK963R2-40B, BUK9640-100A, BUK964R2-55B, BUK964R4-40B, BUK9660-100A, 2N60, BUK9675-55A, BUK98150-55A, BUK98180-100A, BUK9832-55A, BUK9875-100A, BUK9880-55A, BUK9907-40ATC, BUK9907-55ATE