BUK9675-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9675-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 98 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
Paquete / Cubierta: D2PAK

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BUK9675-100A Datasheet (PDF)

..1. Size:82K philips
buk9575 buk9675-100a.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9575-100A Logic level FET BUK9675-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 23 Atrench techn

..2. Size:710K nxp
buk9675-100a.pdf

BUK9675-100AN-channel TrenchMOS logic level FET18 August 2015 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 compl

6.1. Size:345K philips
buk9575-55a buk9675-55a.pdf

BUK9575-55A; BUK9675-55ATrenchMOS logic level FETRev. 01 9 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9575-55A in SOT78 (TO-220AB)BUK9675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

6.2. Size:56K philips
buk9675-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9675-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 19.7 Athe device f

6.3. Size:767K nxp
buk9675-55a.pdf

BUK9675-55AN-channel TrenchMOS logic level FETRev. 2 8 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featur

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