BUK9675-100A Todos los transistores

 

BUK9675-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9675-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 98 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 15 V
   Corriente continua de drenaje |Id|: 23 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Resistencia entre drenaje y fuente RDS(on): 0.072 Ohm
   Paquete / Cubierta: D2PAK

 Búsqueda de reemplazo de MOSFET BUK9675-100A

 

BUK9675-100A Datasheet (PDF)

 ..1. Size:82K  philips
buk9575 buk9675-100a.pdf

BUK9675-100A BUK9675-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9575-100A Logic level FET BUK9675-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 23 Atrench techn

 ..2. Size:710K  nxp
buk9675-100a.pdf

BUK9675-100A BUK9675-100A

BUK9675-100AN-channel TrenchMOS logic level FET18 August 2015 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 compl

 6.1. Size:345K  philips
buk9575-55a buk9675-55a.pdf

BUK9675-100A BUK9675-100A

BUK9575-55A; BUK9675-55ATrenchMOS logic level FETRev. 01 9 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9575-55A in SOT78 (TO-220AB)BUK9675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

 6.2. Size:56K  philips
buk9675-55 2.pdf

BUK9675-100A BUK9675-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9675-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 19.7 Athe device f

 6.3. Size:767K  nxp
buk9675-55a.pdf

BUK9675-100A BUK9675-100A

BUK9675-55AN-channel TrenchMOS logic level FETRev. 2 8 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


BUK9675-100A
  BUK9675-100A
  BUK9675-100A
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top