BUK9Y40-55B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9Y40-55B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 59 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: LFPAK

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BUK9Y40-55B datasheet

 ..1. Size:732K  nxp
 buk9y40-55b.pdf pdf_icon

BUK9Y40-55B

BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use i

 8.1. Size:297K  nxp
 buk9y4r4-40e.pdf pdf_icon

BUK9Y40-55B

BUK9Y4R4-40E N-channel 40 V, 4.4 m logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive

 8.2. Size:344K  nxp
 buk9y43-60e.pdf pdf_icon

BUK9Y40-55B

BUK9Y43-60E N-channel 60 V, 43 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a

 8.3. Size:298K  nxp
 buk9y4r8-60e.pdf pdf_icon

BUK9Y40-55B

BUK9Y4R8-60E N-channel 60 V, 4.8 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive

MOSTRAR MÁS

Otros transistores... BUK9Y12-55B, BUK9Y14-40B, BUK9Y19-55B, BUK9Y19-75B, BUK9Y22-30B, BUK9Y27-40B, BUK9Y30-75B, BUK9Y34-100B, AON6414A, BUK9Y53-100B, BUK9Y58-75B, NX2301P, NX3008CBKS, NX3008CBKV, NX3008NBK, NX3008NBKS, NX3008NBKT