NX3008CBKV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NX3008CBKV
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.4 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: SOT666

Búsqueda de reemplazo de MOSFET NX3008CBKV

NX3008CBKV Datasheet (PDF)

..1. Size:2309K nxp
nx3008cbkv.pdf

NX3008CBKV30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFETRev. 1 29 July 2011 Product data sheet1. Product profile1.1 General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltag

5.1. Size:2329K nxp
nx3008cbks.pdf

NX3008CBKS30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFETRev. 1 29 July 2011 Product data sheet1. Product profile1.1 General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage ESD

8.1. Size:1602K nxp
nx3008nbk.pdf

NX3008NBK30 V, 400 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

8.2. Size:1607K nxp
nx3008pbkv.pdf

NX3008PBKV30 V, 220 mA dual P-channel Trench MOSFETRev. 1 29 July 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection

8.3. Size:1602K nxp
nx3008pbk.pdf

NX3008PBK30 V, 230 mA P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

8.4. Size:1601K nxp
nx3008pbkw.pdf

NX3008PBKW30 V, 200 mA P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

8.5. Size:1598K nxp
nx3008nbkw.pdf

NX3008NBKW30 V, 350 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

8.6. Size:1606K nxp
nx3008nbkv.pdf

NX3008NBKV30 V, 400 mA dual N-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection

8.7. Size:1653K nxp
nx3008pbkmb.pdf

NX3008PBKMB30 V, single P-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up

8.8. Size:1620K nxp
nx3008pbks.pdf

NX3008PBKS30 V, 200 mA dual P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2

8.9. Size:1618K nxp
nx3008nbks.pdf

NX3008NBKS30 V, 350 mA dual N-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2

8.10. Size:1649K nxp
nx3008nbkmb.pdf

NX3008NBKMB30 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up

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