NX3008PBKW MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NX3008PBKW

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.1 Ohm

Encapsulados: SC70

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NX3008PBKW datasheet

 ..1. Size:1601K  nxp
 nx3008pbkw.pdf pdf_icon

NX3008PBKW

NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

 5.1. Size:1607K  nxp
 nx3008pbkv.pdf pdf_icon

NX3008PBKW

NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection

 5.2. Size:1602K  nxp
 nx3008pbk.pdf pdf_icon

NX3008PBKW

NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.3. Size:1653K  nxp
 nx3008pbkmb.pdf pdf_icon

NX3008PBKW

NX3008PBKMB 30 V, single P-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up

MOSTRAR MÁS

Otros transistores... NX3008NBKS, NX3008NBKT, NX3008NBKV, NX3008NBKW, NX3008PBK, NX3008PBKS, NX3008PBKT, NX3008PBKV, IRLB4132, PH2520U, PH2925U, PH3120L, PHB110NQ08T, PHB18NQ10T, PHB191NQ06LT, PHB20N06T, PHB20NQ20T