ALD1101APA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ALD1101APA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 10 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 75 Ohm
Paquete / Cubierta: DIP
Búsqueda de reemplazo de MOSFET ALD1101APA
ALD1101APA Datasheet (PDF)
ald1101.pdf
ADVANCEDLINEAR ALD1101A/ALD1101BDEVICES, INC.ALD1101DUAL N-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-
ald1103.pdf
ADVANCEDLINEARDEVICES, INC.ALD1103DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1103 is a monolithic dual N-channel and dual P-channel matched Precision current mirrorstransistor pair intended for a broad range of analog applications. These Complementary push-pull linear drivesenhancement-mode transistors are manufactured wit
ald110808-series.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110808/ALD110808A/ALD110908/ALD110908AQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.80VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ Precision current mirrorsdual enhancement mode N-Channel MOSFETs matched at the factory Precision current sour
ald110814 ald110914.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110814/ALD110914QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +1.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110814/ALD110914 are monolithic quad/dual enhancement mode N- Precision current mirrorsChannel MOSFETs matched at the factory using ALDs proven EPAD Precision current sourcesCMOS technol
ald1102.pdf
ADVANCEDLINEAR ALD1102A/ALD1102BDEVICES, INC.ALD1102DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1102 is a monolithic dual P-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-
ald1108e ald1110e.pdf
ADVANCEDLINEARALD1108E/ALD1110EDEVICES, INC.QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAYFEATURES BENEFITS Electrically Programmable Analog Device Precision matched electrically after packagingCMOS Technology Simple, elegant single-chip user option Operates from 2V, 3V, 5V to 10V to trim voltage/current values Flexible basic circuit building
ald1105.pdf
ADVANCEDLINEARDEVICES, INC.ALD1105DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1105 is a monolithic dual N-channel and dual P-channel Precision current mirrorscomplementary matched transistor pair intended for a broad range of Complementary push-pull linear drivesanalog applications. These enhancement-mode transistors are
ald1107 ald1117.pdf
ADVANCEDLINEARALD1107/ALD1117DEVICES, INC.QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSThe ALD1107/ALD1117 are monolithic quad/dual P-channel enhance- Precision current sourcesment mode matched MOSFET transistor arrays intended for a broad range Precision current mirrorsof precision analog applications. The ALD1107/ALD1117 offer high input
ald110800 ald110800a ald110900 ald110900a.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110800/ALD110800A/ALD110900/ALD110900AQUAD/DUAL N-CHANNEL ZERO THRESHOLD EPADVGS(th)= +0.00VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONFEATURESALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic quad/ Precision zero threshold voltage modedual N-Channel MOSFETs matched at the factory using ALDs proven Nominal RDS
ald110804 ald110904.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110804/ALD110904QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110804/ALD110904 are monolithic quad/dual enhancement mode N- Ultra low power (nanowatt) analog and digitalChannel MOSFETS matched at the factory using ALDs proven EPAD circuitsCMOS technology
ald110802 ald110902.pdf
TMADVANCEDEPADLINEARDEVICES, INC.ALD110802/ALD110902QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.20VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110802/ALD110902 are monolithic quad/dual enhancement mode N- Ultra low power (nanowatt) analog and digitalChannel MOSFETS matched at the factory using ALDs proven EPAD circuitsCMOS technology
ald1106 ald1116.pdf
ADVANCEDLINEARDEVICES, INC.ALD1106/ALD1116QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSThe ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- Precision current mirrorsment mode matched MOSFET transistor arrays intended for a broad range Precision current sourcesof precision analog applications. The ALD1106/ALD1116 offer high in
Otros transistores... 75333G , 75333P , 75333S , 75339G , 75339P , 75339S , 7N50A , A498 , IRF640N , ALD1101BPA , ALD1101DA , ALD1101MA , APT1001R1AN , APT1001R1AVR , APT1001R1BN , APT1001R1BVFR , APT1001R1HN .
Liste
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