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PHB20NQ20T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHB20NQ20T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: D2PAK
 

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PHB20NQ20T Datasheet (PDF)

 ..1. Size:105K  philips
 phb20nq20t php20nq20t.pdf pdf_icon

PHB20NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP20NQ20T, PHB20NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 20 AgRDS(ON) 130 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plasti

 8.1. Size:334K  philips
 php20n06t phb20n06t.pdf pdf_icon

PHB20NQ20T

PHP20N06T; PHB20N06TN-channel TrenchMOS transistorRev. 01 22 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP20N06T in SOT78 (TO-220AB)PHB20N06T in SOT404 (D 2-PAK).2. Features Very low on-state resistance Fast switching.3. Applications

 8.2. Size:857K  nxp
 phb20n06t.pdf pdf_icon

PHB20NQ20T

PHB20N06TN-channel TrenchMOS standard level FETRev. 02 25 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

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History: 2SK2634 | IXTH90P10P | 2P981BC | VBL1154N | B4N80 | MMN404

 

 
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