PHD101NQ03LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHD101NQ03LT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: DPAK

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PHD101NQ03LT Datasheet (PDF)

..1. Size:773K nxp
phd101nq03lt.pdf

PHD101NQ03LTN-channel TrenchMOS logic level FETRev. 5 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feature

9.1. Size:94K philips
phb108nq03lt phd108nq03lt phu108nq03lt.pdf

PHB/PHD/PHU108NQ03LTN-channel TrenchMOS logic level FETRev. 03 18 April 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge1.3 Applicati

9.2. Size:60K philips
phd10n10e 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suuitable for VDS Drain-source voltage 100 Vsurface mounting. The device is ID Drain current (DC) 11 Aintended for use in Switched Mode Ptot Total power dissipation

9.3. Size:253K philips
phb108nq03lt phd108nq03lt php108nq03lt.pdf

PHP/PHB/PHD108NQ03LTTrenchMOS logic level FETRev. 02 11 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHP108NQ03LT in SOT78 (TO-220AB)PHB108NQ03LT in SOT404 (D2-PAK)PHD108NQ03LT in SOT428 (D-PAK).1.2 Features Logic level compatibl

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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