PHP28NQ15T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHP28NQ15T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: TO220AB
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PHP28NQ15T Datasheet (PDF)
php28nq15t.pdf
PHP28NQ15TN-channel TrenchMOS standard level FETRev. 02 22 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
php28nq15t.pdf
PHP28NQ15TN-channel TrenchMOS standard level FETRev. 02 22 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
php28nq15t.pdf
isc N-Channel MOSFET Transistor PHP28NQ15TDESCRIPTIONDrain Current I = 28A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE
Otros transistores... PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , PHP20N06T , PHP20NQ20T , PHP225 , PHP23NQ11T , PHP27NQ11T , IRF1405 , PHP29N08T , PHP30NQ15T , PHP33NQ20T , PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT .
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