APT1001R1BN Todos los transistores

 

APT1001R1BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT1001R1BN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: TO247
 

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APT1001R1BN Datasheet (PDF)

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 apt1001r1bn.pdf pdf_icon

APT1001R1BN

DTO-247GAPT1001R1BN 1000V 10.5A 1.10SAPT1001R3BN 1000V 10.0A 1.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1001RBN 1001R3BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C10.5 10AmpsIDM Pulsed Drain Curren

 4.1. Size:70K  apt
 apt1001r1bvfr.pdf pdf_icon

APT1001R1BN

APT1001R1BVFR1000V 11A 1.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 5.1. Size:68K  apt
 apt1001r1avr.pdf pdf_icon

APT1001R1BN

APT1001R1AVR1000V 9A 1.100POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 5.2. Size:67K  apt
 apt1001r1hvr.pdf pdf_icon

APT1001R1BN

APT1001R1HVR1000V 9A 1.100POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Low

MOSTRAR MÁS

Otros transistores... 7N50A , A498 , ALD1101APA , ALD1101BPA , ALD1101DA , ALD1101MA , APT1001R1AN , APT1001R1AVR , IRFB4110 , APT1001R1BVFR , APT1001R1HN , APT1001R1HVR , APT1001R2AN , APT1001R2BN , APT1001R2HN , APT1001R3AN , APT1001R3BN .

History: FDD3510H

 

 
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