PMV160UP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV160UP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.335 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm

Encapsulados: TO236AB

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PMV160UP datasheet

 ..1. Size:1631K  nxp
 pmv160up.pdf pdf_icon

PMV160UP

PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast

 ..2. Size:348K  tysemi
 pmv160up.pdf pdf_icon

PMV160UP

Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET tec

 9.1. Size:255K  nxp
 pmv16xn.pdf pdf_icon

PMV160UP

PMV16XN 20 V, N-channel Trench MOSFET 11 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power diss

 9.2. Size:270K  nxp
 pmv164enea.pdf pdf_icon

PMV160UP

PMV164ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

MOSTRAR MÁS

Otros transistores... PMR280UN, PMR290XN, PMR370XN, PMR400UN, PMR780SN, PMT21EN, PMT29EN, PMV117EN, 13N50, PMV16UN, PMV20XN, PMV213SN, PMV22EN, PMV28UN, PMV30UN, PMV30XN, PMV31XN