PSMN011-80YS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN011-80YS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 117 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 67 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN011-80YS MOSFET
PSMN011-80YS Datasheet (PDF)
psmn011-80ys.pdf

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn011-80ys.pdf

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn011-60ml.pdf

PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss
psmn011-60ms.pdf

PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio
Otros transistores... PSMN004-60B , PSMN005-30K , PSMN005-75B , PSMN006-20K , PSMN008-75B , PSMN009-100B , PSMN009-100P , PSMN011-30YL , IRF830 , PSMN012-100YS , PSMN012-60YS , PSMN012-80PS , PSMN013-100BS , PSMN013-100ES , PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC .
History: CS19N40AN | 2SK3883-01 | JCS4N90SA | AP9970AGP-HF | HYG023N03LR1D | 2SK3755 | 4616
History: CS19N40AN | 2SK3883-01 | JCS4N90SA | AP9970AGP-HF | HYG023N03LR1D | 2SK3755 | 4616



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