PSMN013-30YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN013-30YLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0136 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN013-30YLC MOSFET
PSMN013-30YLC Datasheet (PDF)
psmn013-30ylc.pdf

PSMN013-30YLCN-channel 30 V 13.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene
psmn013-30ll.pdf

PSMN013-30LLN-channel QFN3333 30 V 13 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
psmn013-30mlc.pdf

PSMN013-30MLCN-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben
psmn013-100ps.pdf

PSMN013-100PSN-channel 100V 13.9m standard level MOSFET in TO220.Rev. 02 22 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc
Otros transistores... PSMN011-80YS , PSMN012-100YS , PSMN012-60YS , PSMN012-80PS , PSMN013-100BS , PSMN013-100ES , PSMN013-100PS , PSMN013-30LL , MMIS60R580P , PSMN013-80YS , PSMN014-40YS , PSMN014-60LS , PSMN015-100B , PSMN015-100P , PSMN015-110P , PSMN015-60PS , PSMN016-100PS .
History: 2N6764JTXV | PHP18N20E | 2N6766
History: 2N6764JTXV | PHP18N20E | 2N6766



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