PSMN015-60PS Todos los transistores

 

PSMN015-60PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN015-60PS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0148 Ohm
   Paquete / Cubierta: TO220AB
 

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PSMN015-60PS Datasheet (PDF)

 ..1. Size:190K  philips
psmn015-60ps.pdf pdf_icon

PSMN015-60PS

PSMN015-60PSN-channel 60 V 14.8 m standard level MOSFETRev. 3 23 June 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to

 ..2. Size:797K  nxp
psmn015-60ps.pdf pdf_icon

PSMN015-60PS

PSMN015-60PSN-channel 60 V 14.8 m standard level MOSFETRev. 3 23 June 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to

 4.1. Size:201K  nxp
psmn015-60bs.pdf pdf_icon

PSMN015-60PS

PSMN015-60BSN-channel 60 V 14.8 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 6.1. Size:101K  philips
psmn015-100p 100b.pdf pdf_icon

PSMN015-60PS

PSMN015-100P/100BN-channel TrenchMOS Standard level FETRev. 05 14 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Avalanche ruggedness rated.1.3 Applications DC-to-DC converters Switched-

Otros transistores... PSMN013-30LL , PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS , PSMN014-60LS , PSMN015-100B , PSMN015-100P , PSMN015-110P , EMB04N03H , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL , PSMN017-60YS , PSMN017-80PS , PSMN018-80YS , PSMN020-100YS .

History: FS70VS-06 | FDZ391P | FRS9140R | NTR4503N | FDS2582

 

 
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