PSMN016-100PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN016-100PS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 148 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 96 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de PSMN016-100PS MOSFET
PSMN016-100PS Datasheet (PDF)
psmn016-100ps.pdf

PSMN016-100PSN-channel 100V 16 m standard level MOSFET in TO220Rev. 01 1 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn016-100ps.pdf

PSMN016-100PSN-channel 100V 16 m standard level MOSFET in TO-220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff
psmn016-100ys.pdf

PSMN016-100YSN-channel 100 V 16.3 m standard level MOSFET in LFPAKRev. 03 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tre
psmn016-100bs.pdf

PSMN016-100BSN-channel 100V 16 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc
Otros transistores... PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS , PSMN014-60LS , PSMN015-100B , PSMN015-100P , PSMN015-110P , PSMN015-60PS , IRF9640 , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL , PSMN017-60YS , PSMN017-80PS , PSMN018-80YS , PSMN020-100YS , PSMN022-30PL .
History: CS90N03B4 | 2N5903 | FDS2670 | KP101G
History: CS90N03B4 | 2N5903 | FDS2670 | KP101G



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