PSMN016-100YS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN016-100YS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 117 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 51 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0163 Ohm
Encapsulados: LFPAK
Búsqueda de reemplazo de PSMN016-100YS MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN016-100YS datasheet
psmn016-100ys.pdf
PSMN016-100YS N-channel 100 V 16.3 m standard level MOSFET in LFPAK Rev. 03 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tre
psmn016-100ys.pdf
PSMN016-100YS N-channel 100 V 16.3 m standard level MOSFET in LFPAK Rev. 4 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanc
psmn016-100ps.pdf
PSMN016-100PS N-channel 100V 16 m standard level MOSFET in TO220 Rev. 01 1 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency
psmn016-100bs.pdf
PSMN016-100BS N-channel 100V 16 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
Otros transistores... PSMN014-40YS, PSMN014-60LS, PSMN015-100B, PSMN015-100P, PSMN015-110P, PSMN015-60PS, PSMN016-100PS, PSMN016-100XS, RU7088R, PSMN017-30LL, PSMN017-60YS, PSMN017-80PS, PSMN018-80YS, PSMN020-100YS, PSMN022-30PL, PSMN023-80LS, PSMN025-100D
History: AP70P02D | AP70N12NF | AP70N06HD
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