PSMN017-80PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN017-80PS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 103 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de PSMN017-80PS MOSFET
PSMN017-80PS Datasheet (PDF)
psmn017-80ps.pdf

PSMN017-80PSN-channel 80 V 17 m standard level MOSFET in TO220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic
psmn017-80bs.pdf

PSMN017-80BSN-channel 80 V 17 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn017-60ys.pdf

PSMN017-60YSN-channel LFPAK 60 V 15.7 m standard level MOSFETRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn017-30ll.pdf

PSMN017-30LLN-channel QFN3333 30 V 17 m logic level MOSFETRev. 03 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
Otros transistores... PSMN015-100P , PSMN015-110P , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL , PSMN017-60YS , BS170 , PSMN018-80YS , PSMN020-100YS , PSMN022-30PL , PSMN023-80LS , PSMN025-100D , PSMN026-80YS , PSMN027-100PS , PSMN028-100YS .
History: SI7946DP | OSG80R300FF | PSMN1R5-30YL
History: SI7946DP | OSG80R300FF | PSMN1R5-30YL



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