PSMN018-80YS Todos los transistores

 

PSMN018-80YS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN018-80YS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: LFPAK
 

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PSMN018-80YS Datasheet (PDF)

 ..1. Size:225K  philips
psmn018-80ys.pdf pdf_icon

PSMN018-80YS

PSMN018-80YSN-channel LFPAK 80 V 18 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 ..2. Size:825K  nxp
psmn018-80ys.pdf pdf_icon

PSMN018-80YS

PSMN018-80YSN-channel LFPAK 80 V 18 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 6.1. Size:259K  nxp
psmn018-100psf.pdf pdf_icon

PSMN018-80YS

PSMN018-100PSFNextPower 100 V, 18 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s

 6.2. Size:250K  nxp
psmn018-100esf.pdf pdf_icon

PSMN018-80YS

PSMN018-100ESFNextPower 100 V, 18 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s

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History: SE3415 | SDF85NA50HI | SFI9530

 

 
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