PSMN022-30PL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN022-30PL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 41 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de PSMN022-30PL MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN022-30PL datasheet
..1. Size:211K philips
psmn022-30pl.pdf 
PSMN022-30PL N-channel 30 V 22 m logic level MOSFET Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low sw
..2. Size:807K nxp
psmn022-30pl.pdf
PSMN022-30PL N-channel 30 V 22 m logic level MOSFET Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low sw
..3. Size:881K cn vbsemi
psmn022-30pl.pdf
PSMN022-30PL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.010 at VGS = 10 V 55 30 25 nC 0.018 at VGS = 4.5 V 45 D TO-220AB G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise n
4.1. Size:223K nxp
psmn022-30bl.pdf
PSMN022-30BL N-channel 30 V 22.6 m logic level MOSFET in D2PAK Rev. 1 21 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du
8.1. Size:374K philips
psmn023-80ls.pdf
PSMN023-80LS N-channel QFN3333 80 V 23 m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effici
8.2. Size:225K philips
psmn026-80ys.pdf
PSMN026-80YS N-channel LFPAK 80 V 27.5 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
8.3. Size:247K philips
psmn028-100ys.pdf
PSMN028-100YS N-channel LFPAK 100V 27.5 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
8.4. Size:92K philips
psmn020-150w.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 73 A g RDS(ON) 20 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil
8.5. Size:238K philips
psmn027-100ps.pdf
PSMN027-100PS N-channel 100V 26.8 m standard level MOSFET in TO220 Rev. 02 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici
8.6. Size:234K philips
psmn020-100ys.pdf
PSMN020-100YS N-channel 100V 20.5m standard level MOSFET in LFPAK Rev. 02 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren
8.7. Size:97K philips
psmn025-100d 2.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN025-100D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 A g RDS(ON) 25 m s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use the latest PIN DESCRIPTION tab
8.8. Size:732K nxp
psmn026-80ys.pdf
PSMN026-80YS N-channel LFPAK 80 V 27.5 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
8.9. Size:812K nxp
psmn028-100ys.pdf
PSMN028-100YS N-channel LFPAK 100V 27.5 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
8.10. Size:762K nxp
psmn025-80yl.pdf
PSMN025-80YL N-channel 80 V, 25 m logic level MOSFET in LFPAK56 14 April 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon an
8.11. Size:216K nxp
psmn027-100xs.pdf
PSMN027-100XS N-channel 100V 26.8 m standard level MOSFET in TO220F (SOT186A) Rev. 2 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef
8.12. Size:274K nxp
psmn020-30mlc.pdf
PSMN020-30MLC N-channel 30 V 18.1 m logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
8.13. Size:800K nxp
psmn027-100ps.pdf
PSMN027-100PS N-channel 100V 26.8 m standard level MOSFET in TO220 Rev. 3 12 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic
8.14. Size:739K nxp
psmn020-100ys.pdf
PSMN020-100YS N-channel 100V 20.5m standard level MOSFET in LFPAK 26 March 2014 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low g
8.15. Size:794K nxp
psmn025-100d.pdf
PSMN025-100D N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 12 January 2012 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app
8.16. Size:205K nxp
psmn027-100bs.pdf
PSMN027-100BS N-channel 100V 26.8 m standard level MOSFET in D2PAK. Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
8.17. Size:216K nxp
psmn023-40ylc.pdf
PSMN023-40YLC N-channel 40 V 23m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High rel
8.18. Size:759K nxp
psmn021-100yl.pdf
PSMN021-100YL N-channel 100 V, 21 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon
Otros transistores... PSMN016-100PS, PSMN016-100XS, PSMN016-100YS, PSMN017-30LL, PSMN017-60YS, PSMN017-80PS, PSMN018-80YS, PSMN020-100YS, AO4468, PSMN023-80LS, PSMN025-100D, PSMN026-80YS, PSMN027-100PS, PSMN028-100YS, PSMN030-150B, PSMN030-150P, PSMN030-60YS
