PSMN026-80YS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN026-80YS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 74 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0275 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de MOSFET PSMN026-80YS
PSMN026-80YS Datasheet (PDF)
psmn026-80ys.pdf
PSMN026-80YSN-channel LFPAK 80 V 27.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn026-80ys.pdf
PSMN026-80YSN-channel LFPAK 80 V 27.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn023-80ls.pdf
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psmn028-100ys.pdf
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psmn020-150w.pdf
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psmn022-30pl.pdf
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psmn027-100ps.pdf
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psmn020-100ys.pdf
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psmn025-100d 2.pdf
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psmn028-100ys.pdf
PSMN028-100YSN-channel LFPAK 100V 27.5 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn025-80yl.pdf
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psmn020-30mlc.pdf
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psmn022-30bl.pdf
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psmn022-30pl.pdf
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psmn027-100ps.pdf
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psmn020-100ys.pdf
PSMN020-100YSN-channel 100V 20.5m standard level MOSFET in LFPAK26 March 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low g
psmn025-100d.pdf
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psmn027-100bs.pdf
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psmn023-40ylc.pdf
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psmn021-100yl.pdf
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psmn022-30pl.pdf
PSMN022-30PLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.010 at VGS = 10 V 5530 25 nC0.018 at VGS = 4.5 V 45DTO-220AB GSG D SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise n
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Liste
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