PSMN027-100PS Todos los transistores

 

PSMN027-100PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN027-100PS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 103 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 37 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 30 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0268 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET PSMN027-100PS

 

PSMN027-100PS Datasheet (PDF)

 ..1. Size:238K  philips
psmn027-100ps.pdf

PSMN027-100PS
PSMN027-100PS

PSMN027-100PSN-channel 100V 26.8 m standard level MOSFET in TO220Rev. 02 19 February 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 ..2. Size:800K  nxp
psmn027-100ps.pdf

PSMN027-100PS
PSMN027-100PS

PSMN027-100PSN-channel 100V 26.8 m standard level MOSFET in TO220Rev. 3 12 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic

 3.1. Size:216K  nxp
psmn027-100xs.pdf

PSMN027-100PS
PSMN027-100PS

PSMN027-100XSN-channel 100V 26.8 m standard level MOSFET in TO220F (SOT186A)Rev. 2 6 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

 3.2. Size:205K  nxp
psmn027-100bs.pdf

PSMN027-100PS
PSMN027-100PS

PSMN027-100BSN-channel 100V 26.8 m standard level MOSFET in D2PAK.Rev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 8.1. Size:374K  philips
psmn023-80ls.pdf

PSMN027-100PS
PSMN027-100PS

PSMN023-80LSN-channel QFN3333 80 V 23 m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effici

 8.2. Size:225K  philips
psmn026-80ys.pdf

PSMN027-100PS
PSMN027-100PS

PSMN026-80YSN-channel LFPAK 80 V 27.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.3. Size:247K  philips
psmn028-100ys.pdf

PSMN027-100PS
PSMN027-100PS

PSMN028-100YSN-channel LFPAK 100V 27.5 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.4. Size:92K  philips
psmn020-150w.pdf

PSMN027-100PS
PSMN027-100PS

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 73 AgRDS(ON) 20 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

 8.5. Size:211K  philips
psmn022-30pl.pdf

PSMN027-100PS
PSMN027-100PS

PSMN022-30PLN-channel 30 V 22 m logic level MOSFETRev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low sw

 8.6. Size:234K  philips
psmn020-100ys.pdf

PSMN027-100PS
PSMN027-100PS

PSMN020-100YSN-channel 100V 20.5m standard level MOSFET in LFPAKRev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

 8.7. Size:97K  philips
psmn025-100d 2.pdf

PSMN027-100PS
PSMN027-100PS

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN025-100D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTION PINNING SOT428 (DPAK)SiliconMAX products use the latest PIN DESCRIPTIONtab

 8.8. Size:732K  nxp
psmn026-80ys.pdf

PSMN027-100PS
PSMN027-100PS

PSMN026-80YSN-channel LFPAK 80 V 27.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.9. Size:812K  nxp
psmn028-100ys.pdf

PSMN027-100PS
PSMN027-100PS

PSMN028-100YSN-channel LFPAK 100V 27.5 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.10. Size:762K  nxp
psmn025-80yl.pdf

PSMN027-100PS
PSMN027-100PS

PSMN025-80YLN-channel 80 V, 25 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon an

 8.11. Size:274K  nxp
psmn020-30mlc.pdf

PSMN027-100PS
PSMN027-100PS

PSMN020-30MLCN-channel 30 V 18.1 m logic level MOSFET in LFPAK33using TrenchMOS Technology4 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits

 8.12. Size:223K  nxp
psmn022-30bl.pdf

PSMN027-100PS
PSMN027-100PS

PSMN022-30BLN-channel 30 V 22.6 m logic level MOSFET in D2PAKRev. 1 21 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du

 8.13. Size:807K  nxp
psmn022-30pl.pdf

PSMN027-100PS
PSMN027-100PS

PSMN022-30PLN-channel 30 V 22 m logic level MOSFETRev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low sw

 8.14. Size:739K  nxp
psmn020-100ys.pdf

PSMN027-100PS
PSMN027-100PS

PSMN020-100YSN-channel 100V 20.5m standard level MOSFET in LFPAK26 March 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low g

 8.15. Size:794K  nxp
psmn025-100d.pdf

PSMN027-100PS
PSMN027-100PS

PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FETRev. 4 12 January 2012 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 8.16. Size:216K  nxp
psmn023-40ylc.pdf

PSMN027-100PS
PSMN027-100PS

PSMN023-40YLCN-channel 40 V 23m logic level MOSFET in LFPAK usingNextPower technology22 August 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High rel

 8.17. Size:759K  nxp
psmn021-100yl.pdf

PSMN027-100PS
PSMN027-100PS

PSMN021-100YLN-channel 100 V, 21 m logic level MOSFET in LFPAK564 November 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

 8.18. Size:881K  cn vbsemi
psmn022-30pl.pdf

PSMN027-100PS
PSMN027-100PS

PSMN022-30PLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.010 at VGS = 10 V 5530 25 nC0.018 at VGS = 4.5 V 45DTO-220AB GSG D SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise n

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AO8803

 

 
Back to Top

 


History: AO8803

PSMN027-100PS
  PSMN027-100PS
  PSMN027-100PS
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top