PSMN035-150P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PSMN035-150P Datasheet (PDF)

3.1. Size:152K philips
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DISCRETE SEMICONDUCTORSDATA SHEETPSMN035-150B; PSMN035-150PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low therma

3.2. Size:895K cn vbsemi
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PSMN035-150www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

5.1. Size:387K philips
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PSMN035-100LSN-channel QFN3333 100 V 32m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effic

Otros transistores... PSMN027-100PS , PSMN028-100YS , PSMN030-150B , PSMN030-150P , PSMN030-60YS , PSMN034-100PS , PSMN035-100LS , PSMN035-150B , IRFP460 , PSMN038-100K , PSMN039-100YS , PSMN045-80YS , PSMN050-80PS , PSMN057-200B , PSMN057-200P , PSMN059-150Y , PSMN063-150D .