APT1001RBN Todos los transistores

 ..1. Size:51K  apt
 apt1001rbn.pdf

D TO-247 G APT1001RBN 1000V 11.0A 1.00 S APT5030BN 500V 21.0A 0.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 1001RBN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 11 Amps IDM Pulsed Drain Current 1 44 VGS Gate-Source Vo

 5.1. Size:34K  apt
 apt1001rblc.pdf

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw

 5.2. Size:68K  apt
 apt1001rbvr.pdf

APT1001RBVR 1000V 11A 1.000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lowe

 5.3. Size:118K  apt
 apt1001rbvfr.pdf

APT1001RBVFR APT1001RSVFR 1000V 11A 1.00 BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layou