PSMN1R0-30YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R0-30YLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 272 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00115 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN1R0-30YLC MOSFET
PSMN1R0-30YLC Datasheet (PDF)
psmn1r0-30ylc.pdf

PSMN1R0-30YLCN-channel 30 V 1.15 m logic level MOSFET in LFPAKRev. 03 17 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Powe
psmn1r0-30ylc.pdf

PSMN1R0-30YLCN-channel 30 V 1.15 m logic level MOSFET in LFPAK usingNextPower technology15 January 2015 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High reliability Power SO8
psmn1r0-30yld.pdf

PSMN1R0-30YLDN-channel 30 V, 1.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology19 September 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE
psmn1r0-40ssh.pdf

PSMN1R0-40SSHN-channel 40 V, 1 m, 325 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology1 May 2019 Product data sheet1. General description325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and low
Otros transistores... PSMN069-100YS , PSMN070-200B , PSMN070-200P , PSMN085-150K , PSMN0R9-25YLC , PSMN102-200Y , PSMN130-200D , PSMN165-200K , 7N65 , PSMN1R1-25YLC , PSMN1R1-30EL , PSMN1R1-30PL , PSMN1R2-25YL , PSMN1R2-25YLC , PSMN1R2-30YLC , PSMN1R3-30YL , PSMN1R5-25YL .
History: IRF520NLPBF | FQD14N15TM | ZXMN6A09K | 2SK1818-MR | HFD1N60S | 2SK1465 | PE528BA
History: IRF520NLPBF | FQD14N15TM | ZXMN6A09K | 2SK1818-MR | HFD1N60S | 2SK1465 | PE528BA



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