PSMN1R1-25YLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R1-25YLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 215 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00115 Ohm
Encapsulados: LFPAK
Búsqueda de reemplazo de PSMN1R1-25YLC MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN1R1-25YLC datasheet
psmn1r1-25ylc.pdf
PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r1-25ylc.pdf
PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r1-30pl.pdf
PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn1r1-30el.pdf
PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to
Otros transistores... PSMN070-200B, PSMN070-200P, PSMN085-150K, PSMN0R9-25YLC, PSMN102-200Y, PSMN130-200D, PSMN165-200K, PSMN1R0-30YLC, IRF9540, PSMN1R1-30EL, PSMN1R1-30PL, PSMN1R2-25YL, PSMN1R2-25YLC, PSMN1R2-30YLC, PSMN1R3-30YL, PSMN1R5-25YL, PSMN1R5-30YL
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