PSMN1R1-25YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R1-25YLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 215 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00115 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN1R1-25YLC MOSFET
PSMN1R1-25YLC Datasheet (PDF)
psmn1r1-25ylc.pdf

PSMN1R1-25YLCN-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r1-25ylc.pdf

PSMN1R1-25YLCN-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r1-30pl.pdf

PSMN1R1-30PLN-channel 30 V 1.3 m logic level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn1r1-30el.pdf

PSMN1R1-30ELN-channel 30 V 1.3 m logic level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to
Otros transistores... PSMN070-200B , PSMN070-200P , PSMN085-150K , PSMN0R9-25YLC , PSMN102-200Y , PSMN130-200D , PSMN165-200K , PSMN1R0-30YLC , K3569 , PSMN1R1-30EL , PSMN1R1-30PL , PSMN1R2-25YL , PSMN1R2-25YLC , PSMN1R2-30YLC , PSMN1R3-30YL , PSMN1R5-25YL , PSMN1R5-30YL .
History: STW30NM60D | 2SK3580-01MR
History: STW30NM60D | 2SK3580-01MR



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