PSMN1R2-25YLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R2-25YLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 179 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
Encapsulados: LFPAK
Búsqueda de reemplazo de PSMN1R2-25YLC MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN1R2-25YLC datasheet
psmn1r2-25ylc.pdf
PSMN1R2-25YLC N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r2-25yl.pdf
PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro
psmn1r2-25yld.pdf
PSMN1R2-25YLD N-channel 25 V, 1.2 m , 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated wi
psmn1r2-25yl.pdf
PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro
Otros transistores... PSMN102-200Y, PSMN130-200D, PSMN165-200K, PSMN1R0-30YLC, PSMN1R1-25YLC, PSMN1R1-30EL, PSMN1R1-30PL, PSMN1R2-25YL, 2N7002, PSMN1R2-30YLC, PSMN1R3-30YL, PSMN1R5-25YL, PSMN1R5-30YL, PSMN1R5-30YLC, PSMN1R5-40ES, PSMN1R5-40PS, PSMN1R6-30PL
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