PSMN1R5-25YL Todos los transistores

 

PSMN1R5-25YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN1R5-25YL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 109 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
   Paquete / Cubierta: LFPAK
 

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PSMN1R5-25YL Datasheet (PDF)

 ..1. Size:199K  philips
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PSMN1R5-25YL

PSMN1R5-25YLN-channel TrenchMOS logic level FETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

 ..2. Size:706K  nxp
psmn1r5-25yl.pdf pdf_icon

PSMN1R5-25YL

PSMN1R5-25YLN-channel TrenchMOS logic level FETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

 4.1. Size:296K  nxp
psmn1r5-25mlh.pdf pdf_icon

PSMN1R5-25YL

PSMN1R5-25MLHN-channel 25 V, 1.81 m, 150 A logic level MOSFET inLFPAK33 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 Aand optimized with low gate resistance (RG) for fast

 6.1. Size:400K  philips
psmn1r5-30yl.pdf pdf_icon

PSMN1R5-25YL

PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

Otros transistores... PSMN1R0-30YLC , PSMN1R1-25YLC , PSMN1R1-30EL , PSMN1R1-30PL , PSMN1R2-25YL , PSMN1R2-25YLC , PSMN1R2-30YLC , PSMN1R3-30YL , 5N60 , PSMN1R5-30YL , PSMN1R5-30YLC , PSMN1R5-40ES , PSMN1R5-40PS , PSMN1R6-30PL , PSMN1R7-25YLC , PSMN1R7-30YL , PSMN1R7-60BS .

History: FQPF9N30 | AP9469GH | AP15T15GI-HF | CS2N50DU | AOT20N25 | APM4947K | KP511A

 

 
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