PSMN1R5-25YL Todos los transistores

 

PSMN1R5-25YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN1R5-25YL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 109 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
   Paquete / Cubierta: LFPAK

 Búsqueda de reemplazo de MOSFET PSMN1R5-25YL

 

PSMN1R5-25YL Datasheet (PDF)

 ..1. Size:199K  philips
psmn1r5-25yl.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-25YLN-channel TrenchMOS logic level FETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

 ..2. Size:706K  nxp
psmn1r5-25yl.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-25YLN-channel TrenchMOS logic level FETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

 4.1. Size:296K  nxp
psmn1r5-25mlh.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-25MLHN-channel 25 V, 1.81 m, 150 A logic level MOSFET inLFPAK33 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 Aand optimized with low gate resistance (RG) for fast

 6.1. Size:400K  philips
psmn1r5-30yl.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 6.2. Size:235K  philips
psmn1r5-40ps.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-40PSN-channel 40 V 1.6 m standard level MOSFET in TO220.Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High e

 6.3. Size:346K  philips
psmn1r5-30ylc.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.4. Size:227K  philips
psmn1r5-40es.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-40ESN-channel 40 V 1.6 m standard level MOSFET in I2PAK.Rev. 01 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High

 6.5. Size:978K  nxp
psmn1r5-30yl.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 6.6. Size:743K  nxp
psmn1r5-40ps.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-40PSN-channel 40 V 1.6 m standard level MOSFET in TO22015 July 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.Product design and manufacture has been optimized for use in battery operated powertools.2. Features and benefits High efficiency due to low switching and conduction losses Robus

 6.7. Size:930K  nxp
psmn1r5-30ylc.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.8. Size:221K  nxp
psmn1r5-30ble.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-30BLEN-channel 30 V 1.5 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe

 6.9. Size:299K  nxp
psmn1r5-40ysd.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-40YSDN-channel 40 V, 1.5 m, 240 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

 6.10. Size:816K  nxp
psmn1r5-40es.pdf

PSMN1R5-25YL
PSMN1R5-25YL

PSMN1R5-40ESN-channel 40 V 1.6 m standard level MOSFET in I2PAK.Rev. 01 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High

 6.11. Size:261K  inchange semiconductor
psmn1r5-40ps.pdf

PSMN1R5-25YL
PSMN1R5-25YL

isc N-Channel MOSFET Transistor PSMN1R5-40PSFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.12. Size:254K  inchange semiconductor
psmn1r5-30ble.pdf

PSMN1R5-25YL
PSMN1R5-25YL

isc N-Channel MOSFET Transistor PSMN1R5-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.13. Size:255K  inchange semiconductor
psmn1r5-40es.pdf

PSMN1R5-25YL
PSMN1R5-25YL

isc N-Channel MOSFET Transistor PSMN1R5-40ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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