PSMN1R6-30PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R6-30PL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 306 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de PSMN1R6-30PL MOSFET
PSMN1R6-30PL Datasheet (PDF)
psmn1r6-30pl.pdf

PSMN1R6-30PLN-channel 30 V 1.7 m logic level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit
psmn1r6-30pl.pdf

PSMN1R6-30PLN-channel 30 V 1.7 m logic level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit
psmn1r6-30pl.pdf

isc N-Channel MOSFET Transistor PSMN1R6-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn1r6-30mlh.pdf

PSMN1R6-30MLHN-channel 30 V, 1.9 m, 160 A logic level MOSFET inLFPAK33 using NextPowerS3 technology12 November 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 Aand optimized for DC load switch and hot-swap applicat
Otros transistores... PSMN1R2-25YLC , PSMN1R2-30YLC , PSMN1R3-30YL , PSMN1R5-25YL , PSMN1R5-30YL , PSMN1R5-30YLC , PSMN1R5-40ES , PSMN1R5-40PS , AON7410 , PSMN1R7-25YLC , PSMN1R7-30YL , PSMN1R7-60BS , PSMN1R8-30PL , PSMN1R9-25YLC , PSMN2R0-30PL , PSMN2R0-30YL , PSMN2R0-60ES .
History: KF19N20F | FDC6318P | IXFH32N50 | FCPF11N60T | AM7382N | 2SJ139
History: KF19N20F | FDC6318P | IXFH32N50 | FCPF11N60T | AM7382N | 2SJ139



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