PSMN1R6-30PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R6-30PL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 306 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 100 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.15 V
Carga de compuerta (Qg): 212 nC
Resistencia drenaje-fuente RDS(on): 0.0017 Ohm
Empaquetado / Estuche: TO220AB
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PSMN1R6-30PL Datasheet (PDF)
1.1. psmn1r6-30bl.pdf 
Size:213K _update_mosfet
PSMN1R6-30BL N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
1.2. psmn1r6-30pl.pdf Size:225K _philips2
PSMN1R6-30PL N-channel 30 V 1.7 m? logic level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching S
2.1. psmn1r6-40ylc.pdf Size:230K _update_mosfet
PSMN1R6-40YLC N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High
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