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PSMN2R0-60ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN2R0-60ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 338 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: I2PAK
 

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PSMN2R0-60ES Datasheet (PDF)

 ..1. Size:231K  philips
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PSMN2R0-60ES

PSMN2R0-60ESN-channel 60 V 2.2 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 ..2. Size:820K  nxp
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PSMN2R0-60ES

PSMN2R0-60ESN-channel 60 V 2.2 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 ..3. Size:255K  inchange semiconductor
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PSMN2R0-60ES

isc N-Channel MOSFET Transistor PSMN2R0-60ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:237K  philips
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PSMN2R0-60ES

PSMN2R0-60PSN-channel 60 V 2.2 m standard level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

Otros transistores... PSMN1R6-30PL , PSMN1R7-25YLC , PSMN1R7-30YL , PSMN1R7-60BS , PSMN1R8-30PL , PSMN1R9-25YLC , PSMN2R0-30PL , PSMN2R0-30YL , AON7506 , PSMN2R0-60PS , PSMN2R2-25YLC , PSMN2R2-30YLC , PSMN2R2-40PS , PSMN2R5-30YL , PSMN2R6-30YLC , PSMN2R6-40YS , PSMN2R7-30PL .

History: AP9938GEM-HF | MDIB6N70CTH | 2SK3440 | MDF5N50BTH | MDF18N50BTH | MDU1512RH

 

 
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