PSMN2R0-60PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN2R0-60PS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 338 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 137 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET PSMN2R0-60PS
PSMN2R0-60PS Datasheet (PDF)
psmn2r0-60ps.pdf
PSMN2R0-60PSN-channel 60 V 2.2 m standard level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
psmn2r0-60ps.pdf
PSMN2R0-60PSN-channel 60 V 2.2 m standard level MOSFET in TO-2204 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.1.2 Features and benefits High efficiency due to
psmn2r0-60ps.pdf
isc N-Channel MOSFET Transistor PSMN2R0-60PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn2r0-60psr.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
psmn2r0-60es.pdf
PSMN2R0-60ESN-channel 60 V 2.2 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn2r0-60es.pdf
PSMN2R0-60ESN-channel 60 V 2.2 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn2r0-60es.pdf
isc N-Channel MOSFET Transistor PSMN2R0-60ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Otros transistores... PSMN1R7-25YLC , PSMN1R7-30YL , PSMN1R7-60BS , PSMN1R8-30PL , PSMN1R9-25YLC , PSMN2R0-30PL , PSMN2R0-30YL , PSMN2R0-60ES , IRF2807 , PSMN2R2-25YLC , PSMN2R2-30YLC , PSMN2R2-40PS , PSMN2R5-30YL , PSMN2R6-30YLC , PSMN2R6-40YS , PSMN2R7-30PL , PSMN2R8-40PS .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918