PSMN2R2-40PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN2R2-40PS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 306 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
Paquete / Cubierta: TO220AB
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PSMN2R2-40PS Datasheet (PDF)
psmn2r2-40ps.pdf

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFETRev. 02 28 September 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn2r2-40ps.pdf

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFET22 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction lo
psmn2r2-40ps.pdf

isc N-Channel MOSFET Transistor PSMN2R2-40PSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn2r2-40ysd.pdf

PSMN2R2-40YSDN-channel 40 V, 2.2 m, 180 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology25 September 2019 Product data sheet1. General description180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performan
Otros transistores... PSMN1R8-30PL , PSMN1R9-25YLC , PSMN2R0-30PL , PSMN2R0-30YL , PSMN2R0-60ES , PSMN2R0-60PS , PSMN2R2-25YLC , PSMN2R2-30YLC , IRFP450 , PSMN2R5-30YL , PSMN2R6-30YLC , PSMN2R6-40YS , PSMN2R7-30PL , PSMN2R8-40PS , PSMN2R9-25YLC , PSMN3R0-30YL , PSMN3R0-60ES .
History: CEP08N6A | AP9971AGM-HF | PH4840S | SM4844NHK | SVG066R5NSA | QM2605S
History: CEP08N6A | AP9971AGM-HF | PH4840S | SM4844NHK | SVG066R5NSA | QM2605S



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