PSMN2R2-40PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN2R2-40PS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 306 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 130 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET PSMN2R2-40PS

PSMN2R2-40PS Datasheet (PDF)

..1. Size:205K philips
psmn2r2-40ps.pdf

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFETRev. 02 28 September 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

..2. Size:744K nxp
psmn2r2-40ps.pdf

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFET22 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction lo

..3. Size:260K inchange semiconductor
psmn2r2-40ps.pdf

isc N-Channel MOSFET Transistor PSMN2R2-40PSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

4.1. Size:304K nxp
psmn2r2-40ysd.pdf

PSMN2R2-40YSDN-channel 40 V, 2.2 m, 180 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology25 September 2019 Product data sheet1. General description180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performan

4.2. Size:214K nxp
psmn2r2-40bs.pdf

PSMN2R2-40BSN-channel 40 V 2.2 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

4.3. Size:254K inchange semiconductor
psmn2r2-40bs.pdf

isc N-Channel MOSFET Transistor PSMN2R2-40BSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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