PSMN3R5-30LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN3R5-30LL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
Paquete / Cubierta: QFN3333

Búsqueda de reemplazo de MOSFET PSMN3R5-30LL

PSMN3R5-30LL Datasheet (PDF)

..1. Size:404K philips
psmn3r5-30ll.pdf

PSMN3R5-30LLN-channel QFN3333 30 V 3.6 m logic level MOSFETRev. 3 18 August 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency

4.1. Size:238K philips
psmn3r5-30yl.pdf

PSMN3R5-30YLN-channel 30 V 3.5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

4.2. Size:329K nxp
psmn3r5-30yl.pdf

PSMN3R5-30YLN-channel 30 V 3.5 m logic level MOSFET in LFPAK3 August 2018 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic packageusing TrenchMOS technology. This product is designed and qualified for use in industrial andcommunications applications.2. Features and benefits High efficiency due to low

6.1. Size:229K philips
psmn3r5-80es.pdf

PSMN3R5-80ESN-channel 80 V, 3.5 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

6.2. Size:235K philips
psmn3r5-80ps.pdf

PSMN3R5-80PSN-channel 80 V, 3.5 m standard level MOSFET in TO-220Rev. 03 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

6.3. Size:818K nxp
psmn3r5-80es.pdf

6.4. Size:283K nxp
psmn3r5-40ysd.pdf

PSMN3R5-40YSDN-channel 40 V, 3.5 m, 120 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology2 October 2018 Product data sheet1. General description120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

6.5. Size:728K nxp
psmn3r5-25mld.pdf

PSMN3R5-25MLDN-channel 25 V, 3.72 m logic level MOSFET in LFPAK33using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

6.6. Size:819K nxp
psmn3r5-80ps.pdf

6.7. Size:254K inchange semiconductor
psmn3r5-80es.pdf

isc N-Channel MOSFET Transistor PSMN3R5-80ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.8. Size:261K inchange semiconductor
psmn3r5-80ps.pdf

isc N-Channel MOSFET Transistor PSMN3R5-80PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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