PSMN4R0-25YLC Todos los transistores

 ..1. Size:396K  philips
 psmn4r0-25ylc.pdf

PSMN4R0-25YLC N-channel 25 V 4.5 m logic level MOSFET in LFPAK Rev. 01 2 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Po

 ..2. Size:1002K  nxp
 psmn4r0-25ylc.pdf

PSMN4R0-25YLC N-channel 25 V 4.5 m logic level MOSFET in LFPAK Rev. 01 2 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Po

 6.1. Size:233K  philips
 psmn4r0-30yl.pdf

PSMN4R0-30YL N-channel 30 V 4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

 6.2. Size:374K  philips
 psmn4r0-40ys.pdf

PSMN4R0-40YS N-channel LFPAK 40 V 4.2 m standard level MOSFET Rev. 02 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 6.3. Size:263K  nxp
 psmn4r0-60ys.pdf

PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 m standard level FET 14 May 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge

 6.4. Size:819K  nxp
 psmn4r0-30yl.pdf

PSMN4R0-30YL N-channel 30 V 4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

 6.5. Size:361K  nxp
 psmn4r0-30yld.pdf

PSMN4R0-30YLD N-channel 30 V, 4.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 October 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs

 6.6. Size:951K  nxp
 psmn4r0-40ys.pdf

PSMN4R0-40YS N-channel LFPAK 40 V 4.2 m standard level MOSFET Rev. 02 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM