PSMN4R0-30YL Todos los transistores

 

PSMN4R0-30YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN4R0-30YL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 69 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.15 V

Carga de compuerta (Qg): 36.6 nC

Resistencia drenaje-fuente RDS(on): 0.004 Ohm

Empaquetado / Estuche: LFPAK

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PSMN4R0-30YL Datasheet (PDF)

1.1. psmn4r0-30yld.pdf Size:361K _update_mosfet

PSMN4R0-30YL
PSMN4R0-30YL

PSMN4R0-30YLD N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 October 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs

1.2. psmn4r0-30yl.pdf Size:233K _philips2

PSMN4R0-30YL
PSMN4R0-30YL

PSMN4R0-30YL N-channel 30 V 4 m? logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits Hig

 2.1. psmn4r0-60ys.pdf Size:263K _update_mosfet

PSMN4R0-30YL
PSMN4R0-30YL

PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 mΩ standard level FET 14 May 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge •

2.2. psmn4r0-25ylc.pdf Size:396K _philips2

PSMN4R0-30YL
PSMN4R0-30YL

PSMN4R0-25YLC N-channel 25 V 4.5 m? logic level MOSFET in LFPAK Rev. 01 2 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? High reliability Power SO8 p

 2.3. psmn4r0-40ys.pdf Size:374K _philips2

PSMN4R0-30YL
PSMN4R0-30YL

PSMN4R0-40YS N-channel LFPAK 40 V 4.2 m? standard level MOSFET Rev. 02 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? Advanced TrenchMOS provide

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