PSMN4R0-30YL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN4R0-30YL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PSMN4R0-30YL MOSFET
PSMN4R0-30YL datasheet
psmn4r0-30yl.pdf
PSMN4R0-30YL N-channel 30 V 4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit
psmn4r0-30yl.pdf
PSMN4R0-30YL N-channel 30 V 4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit
psmn4r0-30yld.pdf
PSMN4R0-30YLD N-channel 30 V, 4.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 October 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs
psmn4r0-25ylc.pdf
PSMN4R0-25YLC N-channel 25 V 4.5 m logic level MOSFET in LFPAK Rev. 01 2 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Po
Otros transistores... PSMN3R5-30LL , PSMN3R5-30YL , PSMN3R5-80ES , PSMN3R5-80PS , PSMN3R7-25YLC , PSMN3R7-30YLC , PSMN3R8-30LL , PSMN4R0-25YLC , 2N60 , PSMN4R0-40YS , PSMN4R1-30YLC , PSMN4R3-30PL , PSMN4R3-80ES , PSMN4R3-80PS , PSMN4R4-80PS , PSMN4R5-30YLC , PSMN4R5-40PS .
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