PSMN4R1-30YLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN4R1-30YLC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 64 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00435 Ohm

Encapsulados: LFPAK

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PSMN4R1-30YLC datasheet

 ..1. Size:335K  philips
psmn4r1-30ylc.pdf pdf_icon

PSMN4R1-30YLC

PSMN4R1-30YLC N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 ..2. Size:745K  nxp
psmn4r1-30ylc.pdf pdf_icon

PSMN4R1-30YLC

PSMN4R1-30YLC N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 12 February 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8

 6.1. Size:725K  nxp
psmn4r1-60yl.pdf pdf_icon

PSMN4R1-30YLC

PSMN4R1-60YL N-channel 60 V, 4.1 m logic level MOSFET in LFPAK56 20 October 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon

 8.1. Size:231K  philips
psmn4r5-40ps.pdf pdf_icon

PSMN4R1-30YLC

PSMN4R5-40PS N-channel 40 V 4.6 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo

Otros transistores... PSMN3R5-80ES, PSMN3R5-80PS, PSMN3R7-25YLC, PSMN3R7-30YLC, PSMN3R8-30LL, PSMN4R0-25YLC, PSMN4R0-30YL, PSMN4R0-40YS, P60NF06, PSMN4R3-30PL, PSMN4R3-80ES, PSMN4R3-80PS, PSMN4R4-80PS, PSMN4R5-30YLC, PSMN4R5-40PS, PSMN4R6-60PS, PSMN5R0-100ES