PSMN4R5-40PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN4R5-40PS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 148 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 42.3 nC
Resistencia entre drenaje y fuente RDS(on): 0.0046 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET PSMN4R5-40PS
PSMN4R5-40PS Datasheet (PDF)
psmn4r5-40ps.pdf
PSMN4R5-40PSN-channel 40 V 4.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo
psmn4r5-40ps.pdf
PSMN4R5-40PSN-channel 40 V 4.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo
psmn4r5-40bs.pdf
PSMN4R5-40BSN-channel 40 V 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie
psmn4r5-30ylc.pdf
PSMN4R5-30YLCN-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 5 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn4r5-30ylc.pdf
PSMN4R5-30YLCN-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 5 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
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