PSMN5R0-100ES Todos los transistores

 

PSMN5R0-100ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN5R0-100ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 338 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: I2PAK
 

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PSMN5R0-100ES Datasheet (PDF)

 ..1. Size:238K  philips
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PSMN5R0-100ES

PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 ..2. Size:811K  nxp
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PSMN5R0-100ES

PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 3 26 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High ef

 3.1. Size:245K  philips
psmn5r0-100ps.pdf pdf_icon

PSMN5R0-100ES

PSMN5R0-100PSN-channel 100 V 5 m standard level MOSFET in TO-220Rev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 3.2. Size:216K  nxp
psmn5r0-100xs.pdf pdf_icon

PSMN5R0-100ES

PSMN5R0-100XSN-channel 100V 5 m standard level MOSFET in TO220F (SOT186A)Rev. 1 3 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

Otros transistores... PSMN4R1-30YLC , PSMN4R3-30PL , PSMN4R3-80ES , PSMN4R3-80PS , PSMN4R4-80PS , PSMN4R5-30YLC , PSMN4R5-40PS , PSMN4R6-60PS , STP65NF06 , PSMN5R0-100PS , PSMN5R0-30YL , PSMN5R0-80PS , PSMN5R5-60YS , PSMN5R6-100PS , PSMN5R6-100XS , PSMN5R8-30LL , PSMN5R8-40YS .

History: AM2342 | SM8404CSQ | TTX2302 | NCE60NF080F | LSB60R030HT | TK13J65U | RV2C001ZP

 

 
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