PSMN6R0-25YLB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN6R0-25YLB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 73 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.95 V
   Qgⓘ - Carga de la puerta: 19.3 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0061 Ohm
   Paquete / Cubierta: LFPAK

Búsqueda de reemplazo de MOSFET PSMN6R0-25YLB

PSMN6R0-25YLB Datasheet (PDF)

..1. Size:910K nxp
psmn6r0-25ylb.pdf

PSMN6R0-25YLBN-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

2.1. Size:721K nxp
psmn6r0-25yld.pdf

PSMN6R0-25YLDN-channel 25 V, 6.75 m logic level MOSFET in LFPAK56using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

6.1. Size:383K philips
psmn6r0-30yl.pdf

PSMN6R0-30YLN-channel 30 V 6 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

6.2. Size:324K nxp
psmn6r0-30yld.pdf

PSMN6R0-30YLDN-channel 30 V, 6.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

6.3. Size:910K nxp
psmn6r0-30ylb.pdf

PSMN6R0-30YLBN-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: