PSMN6R5-80PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN6R5-80PS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 210 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 71 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0069 Ohm
   Paquete / Cubierta: TO220AB

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PSMN6R5-80PS Datasheet (PDF)

..1. Size:222K philips
psmn6r5-80ps.pdf

PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

..2. Size:818K nxp
psmn6r5-80ps.pdf

4.1. Size:229K nxp
psmn6r5-80bs.pdf

PSMN6R5-80BSN-channel 80V 6.9m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

6.1. Size:898K nxp
psmn6r5-25ylc.pdf

PSMN6R5-25YLCN-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

6.2. Size:286K nxp
psmn6r5-30mld.pdf

PSMN6R5-30MLDN-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as

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