PSMN7R0-40LS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN7R0-40LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Encapsulados: QFN3333
Búsqueda de reemplazo de PSMN7R0-40LS MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN7R0-40LS datasheet
psmn7r0-40ls.pdf
PSMN7R0-40LS N-channel QFN3333 40 V 7.0 m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effic
psmn7r0-60ys.pdf
PSMN7R0-60YS N-channel LFPAK 60 V 6.4 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn7r0-30yl.pdf
PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
psmn7r0-100es.pdf
PSMN7R0-100ES N-channel 100V 6.8 m standard level MOSFET in I2PAK. Rev. 03 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien
Otros transistores... PSMN6R0-30YLB, PSMN6R5-25YLC, PSMN6R5-80PS, PSMN7R0-100ES, PSMN7R0-100PS, PSMN7R0-100XS, PSMN7R0-30YL, PSMN7R0-30YLC, 20N60, PSMN7R0-60YS, PSMN7R5-25YLC, PSMN7R6-60PS, PSMN8R0-30YL, PSMN8R0-30YLC, PSMN8R0-40PS, PSMN8R2-80YS, PSMN8R3-40YS
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