STB120N4F6 Todos los transistores

 

STB120N4F6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STB120N4F6
   Código: 120N4F6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 110 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 80 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 65 nC
   Tiempo de subida (tr): 70 nS
   Conductancia de drenaje-sustrato (Cd): 650 pF
   Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
   Paquete / Cubierta: D2PAK

 Búsqueda de reemplazo de MOSFET STB120N4F6

 

STB120N4F6 Datasheet (PDF)

 ..1. Size:1091K  st
stb120n4f6 std120n4f6.pdf

STB120N4F6
STB120N4F6

STB120N4F6, STD120N4F6Automotive-grade N-channel 40 V, 3.5 m typ., 80 ASTripFET F6 Power MOSFETs in DPAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on) max. IDSTB120N4F6 40 V 4 m 80 ATABSTD120N4F6 40 V 4 m 80 ATAB Designed for automotive applications and 33AEC-Q101 qualified11 Very low on-resistanceDPAKDPAK

 ..2. Size:918K  st
std120n4f6 stp120n4f6 stb120n4f6.pdf

STB120N4F6
STB120N4F6

STB120N4F6STD120N4F6, STP120N4F6N-channel 40 V, 4 m , 80 A, DPAK, DPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STB120N4F6 40 V 4 m 80 A 3STD120N4F6 40 V 4 m 80 A311STP120N4F6 40 V 4.3 m 80 ADPAKDPAK Standard threshold drive 100% avalanche tested 321TO-220Application Switching applications

 6.1. Size:806K  st
stb120n4lf6 std120n4lf6.pdf

STB120N4F6
STB120N4F6

STB120N4LF6STD120N4LF6N-channel 40 V, 4 m, 80 A DPAK, D2PAKSTripFET VI DeepGATE Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) max IDSTB120N4LF6 40 V 4.0 m 80 A STD120N4LF6 40 V 4.0 m 80 A3311 Logic level driveDPAKDPAK 100% avalanche testedApplication Switching applications AutomotiveFigure 1. Internal schematic diagram

 7.1. Size:530K  st
stb120nh03l sti120nh03l stp120nh03l.pdf

STB120N4F6
STB120N4F6

STB120NH03L - STI120NH03LSTP120NH03LN-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAKSTripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTB120NH03L 30V

 7.2. Size:940K  st
stb120nf10t4.pdf

STB120N4F6
STB120N4F6

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

 7.3. Size:943K  st
stb120n10f4.pdf

STB120N4F6
STB120N4F6

STB120N10F4, STP120N10F4N-channel 100 V, 8 m typ., 120 A, STripFET DeepGATE Power MOSFETs in D2PAK and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max. IDTABSTB120N10F4TAB100 V 10 m 120 A STP120N10F4 N-channel enhancement mode33211 Very low on-resistanceD 2PAK TO-220 Low gate charge 100% avalanche rate

 7.4. Size:535K  st
stb120nh03l sti120nh03l stp120nh03l.pdf

STB120N4F6
STB120N4F6

STB120NH03L - STI120NH03LSTP120NH03LN-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAKSTripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTB120NH03L 30V

 7.5. Size:1031K  st
stb120nf10t4 stp120nf10 stw120nf10.pdf

STB120N4F6
STB120N4F6

STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 m typ., 110 A STripFET II Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data TABFeatures Order code V R max. I DS DS(on) DSTB120NF10T4 STP120NF10 100 V 10.5 m 110 A D2PAKTAB STW120NF10 Exceptional dv/dt capability 100% avalanche tested 3 Low gate charge 3

 7.6. Size:940K  st
stp120nf10 stb120nf10 stf120nf10 stw120nf10.pdf

STB120N4F6
STB120N4F6

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

 7.7. Size:940K  st
stp120nf10 stb120nf10.pdf

STB120N4F6
STB120N4F6

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

 7.8. Size:390K  st
stw120nf10 stp120nf10 stb120nf10.pdf

STB120N4F6
STB120N4F6

STP120NF10 - STB120NF10STW120NF10N-channel 100V - 0.009 - 110A - TO-247 - TO-220 - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTW120NF10 100V

 7.9. Size:858K  cn vbsemi
stb120nf10.pdf

STB120N4F6
STB120N4F6

STB120NF10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


STB120N4F6
  STB120N4F6
  STB120N4F6
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top