APT1003R5AN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT1003R5AN  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm

Encapsulados: TO3

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APT1003R5AN datasheet

 6.1. Size:100K  apt
 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003R5AN

APT1003RBFLL APT1003RSFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with

 6.2. Size:99K  apt
 apt1003rbllg apt1003rsllg.pdf pdf_icon

APT1003R5AN

APT1003RBLL APT1003RSLL 1000V 4A 3.00 R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exc

 6.3. Size:94K  apt
 apt1003rkfllg.pdf pdf_icon

APT1003R5AN

APT1003RKFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptionall

 6.4. Size:92K  apt
 apt1003rkll.pdf pdf_icon

APT1003R5AN

APT1003RKLL 1000V 4A 3.00 R POWER MOS 7 MOSFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) G and Qg. Power MOS 7 combines lower conduction and switching losses D S along with exceptionally

MOSTRAR MÁS

Otros transistores... APT10025PVR, APT10026JN, APT1002R4AN, APT1002R4BN, APT1002R4CN, APT1002RAN, APT1002RBN, APT1002RCN, 5N65, APT1003R5BN, APT1003R5CN, APT1003R5GN, APT10043JVR, APT1004R2AN, APT1004R2BN, APT1004R2CN, APT1004R2GN