APT1003R5CN Todos los transistores

 

APT1003R5CN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT1003R5CN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
   Paquete / Cubierta: TO254
 

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APT1003R5CN Datasheet (PDF)

 6.1. Size:100K  apt
apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003R5CN

APT1003RBFLLAPT1003RSFLL1000V 4A 3.00R POWER MOS 7 FREDFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

 6.2. Size:99K  apt
apt1003rbllg apt1003rsllg.pdf pdf_icon

APT1003R5CN

APT1003RBLLAPT1003RSLL1000V 4A 3.00R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exc

 6.3. Size:94K  apt
apt1003rkfllg.pdf pdf_icon

APT1003R5CN

APT1003RKFLL1000V 4A 3.00R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptionall

 6.4. Size:92K  apt
apt1003rkll.pdf pdf_icon

APT1003R5CN

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

Otros transistores... APT1002R4AN , APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN , APT1002RCN , APT1003R5AN , APT1003R5BN , TK10A60D , APT1003R5GN , APT10043JVR , APT1004R2AN , APT1004R2BN , APT1004R2CN , APT1004R2GN , APT1004RAN , APT1004RBN .

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History: MPSC65M170 | APT10043JVR

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