STB5N62K3 Todos los transistores

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STB5N62K3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STB5N62K3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 70 W

Tensión drenaje-fuente (Vds): 620 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Corriente continua de drenaje (Id): 4.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.6 Ohm

Empaquetado / Estuche: D2PAK

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STB5N62K3 Datasheet (PDF)

1.1. stb5n62k3 std5n62k3 stf5n62k3 stp5n62k3 stu5n62k3.pdf Size:1172K _st

STB5N62K3
STB5N62K3

STB5N62K3, STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 N-channel 620 V, 1.28 ?, 4.2 A SuperMESH3 Power MOSFET D?PAK, DPAK,TO-220FP, TO-220 and IPAK Features RDS(on) Order codes VDSS ID Pw max. 3 3 3 2 2 1 STB5N62K3 1 1 70 W STD5N62K3 DPAK TO-220 TO-220FP STF5N62K3 620 V < 1.6 ? 4.2 A 25 W STP5N62K3 70 W STU5N62K3 3 3 2 100% avalanche tested 1 1 IPAK Extremely lar

4.1. stb5n60b.pdf Size:86K _st

STB5N62K3
STB5N62K3

STB5NB60 ? N - CHANNEL 600V - 1.8? - 5A- I2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STB5NB60 600 V < 2.0 ? 5 A TYPICAL R = 1.8 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD D2PAK VERSION CONTACT 2 1 SALES OFFICE I2PAK DESCRIPTION TO-262 Using the latest high voltage MESH OVERLAY? (suffix

5.1. stb5na80.pdf Size:131K _st

STB5N62K3
STB5N62K3

STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB5NA80 800 V < 2.4 ? 4.7 A TYPICAL R = 1.8 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 3 3 2 APPLICATION ORIENTED 1 1 CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER I2PAK D2

5.2. stb5nk50z.pdf Size:618K _st

STB5N62K3
STB5N62K3

STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22?-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP5NK50Z 500 V < 1.5 ? 4.4 A 70 W STP5NK50ZFP 500 V < 1.5 ? 4.4 A 25 W STD5NK50Z 500 V < 1.5 ? 4.4 A 70 W STD5NK50Z-1 500 V < 1.5 ? 4.4 A 70 W STB5BK50Z-1 500 V < 1.5 ? 4.4 A 70 W 3 2 1 TYPICAL RDS(on) = 1.22 ?

5.3. stb5nk50z-1 std5nk50z-1 stp5nk50z stp5nk50zfp.pdf Size:449K _st

STB5N62K3
STB5N62K3

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22? - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESHMOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STB5NK50Z 500 V < 1.5 ? 4.4 A 70 W STB5NK50Z-1 500 V < 1.5 ? 4.4 A 70 W STD5NK50Z 500 V < 1.5 ? 4.4 A 70 W STD5NK50Z-1 500 V < 1.5 ? 4.4 A 70 W 3 2 1 3 STP5K50Z 500 V < 1.5 ? 4.4

5.4. stp5nc50,stb5nc50.pdf Size:534K _st

STB5N62K3
STB5N62K3

STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3? - 5.5A TO-220/FP/D2PAK/I2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP5NC50 500 V <1.5? 5.5A STP5NC50FP 500 V <1.5? 5.5A STB5NC50 500 V <1.5? 5.5A 3 STB5NC50-1 500 V <1.5? 5.5A 1 TYPICAL RDS(on) = 1.3? D2PAK TO-220 TO-220FP EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE

5.5. stb5n52k3 std5n52k3 stf5n52k3 stp5n52k3 stu5n52k3.pdf Size:1175K _st

STB5N62K3
STB5N62K3

STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3 Power MOSFET D?PAK, DPAK, TO-220FP, TO-220, IPAK Features Order codes VDSS RDS(on) max ID Pw STB5N52K3 70 W 3 3 3 2 2 1 STD5N52K3 70 W 1 1 STF5N52K3 525 V < 1.5 ? 4.4 A 25 W TO-220 TO-220FP DPAK STP5N52K3 70 W STU5N52K3 70 W 100% avalanche tested 3 3 2 Extremely high dv/dt capabi

5.6. stb5nk52zd-1 std5nk52zd stf5nk52zd stp5nk52zd.pdf Size:776K _st

STB5N62K3
STB5N62K3

STD5NK52ZD, STB5NK52ZD-1 STF5NK52ZD,STP5NK52ZD N-channel 520 V,1.22 ?,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 2 IPAK 3 STB5NK52ZD-1 520 V < 1.5 ? 4.4 A 70 W 2 1 2 I PAK 1 STD5NK52ZD-1 520 V < 1.5 ? 4.4 A 70 W 3 STD5NK52ZD 520 V < 1.5 ? 4.4 A 70 W 1 STF5NK52ZD 520 V < 1.5 ? 4.4 A 25 W DPAK STP5NK52ZD

5.7. stb5na50.pdf Size:126K _st

STB5N62K3
STB5N62K3

STB5NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on ) D STB5NA50 500 V < 1.6 ? 5 A n TYPICAL RDS(on) = 1.2 ? n 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED 3 3 2 n REDUCED THRESHOLD VOLTAGE SPREAD 1 1 n THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE I

Otros transistores... STB4NK60Z , STB4NK60Z-1 , STB50N25M5 , STB50NF25 , STB55NF03L , STB55NF06 , STB55NF06L , STB5N52K3 , RFP50N06 , STB5NK50Z , STB60N55F3 , STB60NF06 , STB60NF06L , STB60NF10 , STB6N52K3 , STB6NK60Z , STB6NK60Z-1 .

 


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