STD10NM50N Todos los transistores

 

STD10NM50N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD10NM50N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 70 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 17 nC

Resistencia drenaje-fuente RDS(on): 0.63 Ohm

Empaquetado / Estuche: DPAK

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STD10NM50N Datasheet (PDF)

1.1. std10nm50n stf10nm50n stp10nm50n.pdf Size:951K _st

STD10NM50N
STD10NM50N

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STD10NM50N 1 TO-220FP TO-220 STF10NM50N 550 V < 0.63 Ω 7 A STP10NM50N ■ 100% avalanche tested 3 ■ Low input capacitance and gate charge 1 ■ Low gate input resistance DPAK Application Switching app

3.1. std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf Size:901K _st

STD10NM50N
STD10NM50N

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 Ω 10 A STP10NM60N 70 W STU10NM60N 3 ■ 100% avalanche tested 2 3 1 1 ■ Low input capacitance and gate charge

3.2. std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf Size:525K _st

STD10NM50N
STD10NM50N

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V < 0.48 Ω 9 A 1 IPAK STF10NM65N 710 V < 0.48 Ω 9 A(1) TO-220 STP10NM65N 710 V < 0.48 Ω 9 A STU10NM65N 710 V < 0.48 Ω 9 A 3 1. Limited only by maximum temperature all

 3.3. std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf Size:997K _st

STD10NM50N
STD10NM50N

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 Ω 8 A STP10NM60N 70 W STU10NM60N 3 ■ 100% avalanche tested 2 3 1 1 ■ Low input capacitance and gate charge IPAK

3.4. std10nm60n.pdf Size:208K _inchange_semiconductor

STD10NM50N
STD10NM50N

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM60N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

 3.5. std10nm65n.pdf Size:208K _inchange_semiconductor

STD10NM50N
STD10NM50N

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM65N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T

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