STD11NM50N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD11NM50N
Código: 11NM50N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 19 nC
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 42 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET STD11NM50N
STD11NM50N Datasheet (PDF)
std11nm50n stf11nm50n stp11nm50n.pdf
STD11NM50NSTF11NM50N, STP11NM50NN-channel 500 V, 0.4 , 9 A MDmesh II Power MOSFETin DPAK, TO-220FP and TO-220FeaturesRDS(on) Type VDSS @TJmax ID3max13STD11NM50N2DPAK1STF11NM50N 550 V
std11nm50n.pdf
Isc N-Channel MOSFET Transistor STD11NM50NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
std11nm65n stf11nm65n stf11nm65n stp11nm65n.pdf
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V
stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
std11nm65n stf11nm65n stfi11nm65n stp11nm65n.pdf
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V
stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf
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Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918