STD155N3H6 Todos los transistores

 

STD155N3H6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD155N3H6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 70 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 80 nC

Resistencia drenaje-fuente RDS(on): 0.003 Ohm

Empaquetado / Estuche: DPAK

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STD155N3H6 Datasheet (PDF)

5.1. std15nf10t4.pdf Size:329K _upd

STD155N3H6
STD155N3H6

STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET™ II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V < 0.065 Ω 23 A 3 1 ■ Exceptional dv/dt capability ■ 100% avalanche tested DPAK ■ Application oriented characterization Application ■ Switching applications Figure 1. Internal schematic diagram Description This MOSFET series re

5.2. std150nh02l-1 std150nh02lt4.pdf Size:516K _upd

STD155N3H6
STD155N3H6

STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK™ - IPAK STripFET™ IlI Power MOSFET General features VDSSS RDS(on) ID Type STD150NH02L 24V <0.0035Ω 150A 3 3 STD150NH02L-1 24V <0.0035Ω 150A 2 1 1 ■ RDS(on) * Qg industry’s benchmark ClipPAKTM IPAK ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device Description Int

 5.3. std15n65m5.pdf Size:1087K _upd

STD155N3H6
STD155N3H6

STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features VDS @ RDS(on) Order codes ID TJmax max TAB STB15N65M5 TAB 710 V < 0.34 Ω 11 A STD15N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

5.4. std150n3llh6 stp150n3llh6 stu150n3llh6.pdf Size:945K _st

STD155N3H6
STD155N3H6

STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 ? , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 ? 80 A 3 3 2 STP150N3LLH6 30 V 0.0033 ? 80 A 1 1 STu150N3LLH6 30 V 0.0033 ? 80 A IPAK DPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 High avalanche ruggedne

 5.5. std15n06-.pdf Size:168K _st

STD155N3H6
STD155N3H6

STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06 60 V < 0.1 ? 15 A TYPICAL RDS(on) = 0.075 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-2

5.6. std150nh02l.pdf Size:486K _st

STD155N3H6
STD155N3H6

STD150NH02L-1 STD150NH02L N-channel 24V - 0.003? - 150A - ClipPAK - IPAK STripFET IlI Power MOSFET General features VDSSS RDS(on) ID Type STD150NH02L 24V <0.0035? 150A 3 3 STD150NH02L-1 24V <0.0035? 150A 2 1 1 RDS(on) * Qg industrys benchmark ClipPAKTM IPAK Conduction losses reduced Switching losses reduced Low threshold device Description Internal schematic diagram

5.7. std15n.pdf Size:140K _st

STD155N3H6
STD155N3H6

STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06L 60 V < 0.1 ? 15 A TYPICAL RDS(on) = 0.075 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH

5.8. std15nf10.pdf Size:331K _st

STD155N3H6
STD155N3H6

STD15NF10 N-channel 100 V, 0.060 ?, 23 A, DPAK low gate charge STripFET II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V < 0.065 ? 23 A 3 1 Exceptional dv/dt capability 100% avalanche tested DPAK Application oriented characterization Application Switching applications Figure 1. Internal schematic diagram Description This MOSFET series realized with STM

5.9. stu15n20 std15n20.pdf Size:148K _samhop

STD155N3H6
STD155N3H6

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

5.10. stu15l01 std15l01.pdf Size:149K _samhop

STD155N3H6
STD155N3H6

Green Product STU/D15L01 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 145 @ VGS=10V TO-252 and TO-251 Package. 15A 100V 195 @ VGS=4.5V Halogen free. G S STU SERIES STD SERIES ( ) TO - 252AA D- PA

5.11. stu1530pl std1530pl.pdf Size:98K _samhop

STD155N3H6
STD155N3H6

S TU/D1530P L S amHop Microelectronics C orp. P reliminary Mar.28 2004 P-Channel E nhancement Mode MOS FE T PR ODUC T S UMMAR Y FEATUR ES R DS (ON) ( m Ω ) Max VDS S ID S uper high dense cell design for low R DS (ON). R ugged and reliable. 45 @ VGS =-10V -30V -20A TO-252 and TO-251 Package. 60 @ VGS = -4.5V D D G G S SDU SERIES SDD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABS

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