STD155N3H6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STB155N3H6STD155N3H6N-channel 30 V, 2.5 m , 80 A, DPAK, DPAKSTripFET VI DeepGATE Power MOSFETFeaturesOrder codes VDSS RDS(on) max IDSTB155N3H6 30 V

STB155N3LH6STD155N3LH6N-channel 30 V, 2.4 m , 80 A, DPAK, DPAKSTripFETVI DeepGATE Power MOSFETFeaturesRDS(on) Order codes VDSS ID(1) PTOTmaxTABSTB155N3LH630 V 3.0 m 80 A 110 WTABSTD155N3LH61. Current limited by package3311 100% avalanche testedDPAK Logic level driveDPAKApplications Switching applications AutomotiveFig

STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V

STD150N3LLH6STP150N3LLH6, STU150N3LLH6N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD150N3LLH6 30 V 0.0028 80 A 332STP150N3LLH6 30 V 0.0033 80 A11STu150N3LLH6 30 V 0.0033 80 AIPAKDPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)32 Hi

STD150NH02L-1STD150NH02LN-channel 24V - 0.003 - 150A - ClipPAK - IPAKSTripFET IlI Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD150NH02L 24V

STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V

STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval

STD150NH02L-1STD150NH02LN-channel 24V - 0.003 - 150A - ClipPAK - IPAKSTripFET IlI Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD150NH02L 24V

STD15N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06 60 V

STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V

STB15N65M5, STD15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTABSTB15N65M5TAB710 V

STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS

STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V

STU15N20GreenProductSTD15N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.200V 15A 190 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKAB

S TU/D1530P LS amHop Microelectronics C orp.P reliminary Mar.28 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR Y FEATUR ESR DS (ON) ( m ) MaxVDS S ID S uper high dense cell design for low R DS (ON).R ugged and reliable.45 @ VGS =-10V-30V -20ATO-252 and TO-251 Package.60 @ VGS = -4.5VDDGGSSDU SERIES SDD SERIESTO-252AA(D-PAK) TO-251(l-PAK)SABS

GreenProductSTU/D15L01aS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.145 @ VGS=10VTO-252 and TO-251 Package.15A100V195 @ VGS=4.5V Halogen free.GSSTU SERIESSTD SERIES( )TO - 252AA D- PA

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD15NF10T4FEATURESWith To-252(DPAK) packageApplication oriented characterizationExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER